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| PWRLITE LD1106S High Performance N-Channel POWERJFETTM with Schottky Diode Features Trench Power JFET with low threshold voltage Vth. Device fully "ON" with Vgs = 0.7V Optimum for "Low Side" Buck Converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching No "Body Diode"; extremely low Cds Added Fast Recovery Schottky Diode in same package Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution. Applications DC-DC Converters for DDR and Graphic designs Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules DPAK Pin Assignments D G D G S S N - Channel Power JFET with Schottky Diode Pin Definitions Pin Number 1 2 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 15V Product Summary Rdson () 0.009 ID (A) 30 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25C (VDD= 5VDC, IL=30APK, L=0.3mH, RG=100 ) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25C on large heat sink) Symbol VDS VGS VGD ID ID EAS TJ TSTG T PD Ratings 15 -10 -18 30 60 120 -55 to 150C -65 to 150C 260C 60 Units V V V A A mJ C C C W LD1106S.Rev 0.92 - AD 12-04 Thermal Resistance Symbol RJA RJC Parameter Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case DPAK Ratings 85 2.0 Units C/W C/W Electrical Specifications (TA = +25C, unless otherwise noted.) The denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Static BVDSX Breakdown Voltage ID = 0.5 mA 15 Drain to Source VGS= -4 V BVGDO Breakdown Voltage IG = -50A Gate to Drain BVGSO Breakdown Voltage IG = -1 mA Gate to Source RDS(ON) Static Drain to Source1 On IG = 40 mA, ID=10A Resistance (Current flows IG = 10 mA, ID=10A IG = 5 mA, ID=10A drain-to-source) See Fig. 1 VGS(TH) Gate Threshold Voltage -1200 VDS=0.1 V, ID=250A Dynamic QG Total Gate Charge VDrive =5V, ID=10A,VDS=15V QGD Gate to Drain Charge QGS Gate to Source Charge QSW Switching Charge RG Gate Resistance TD(ON) Turn-on Delay Time VDD=12V, ID=10A TR Rise Time VDrive = 5 V TD(OFF) Turn-off Delay Clamped Inductive Load TF Fall Time CISS Input Capacitance COSS Output Capacitance VDS=10V, VGS= -5 V, 1MHz. CGS Gate-Source Capacitance CGD Gate-Drain Capacitance CDS Drain-Source Capacitance Schottky Diode IR Reverse Leakage VF Forward Voltage VF Forward Voltage VF Forward Voltage Qrr Reverse Recovery Charge Notes: 1. Pulse width <= 500s, duty cycle < = 2% VR=15V IF = 1 A IF = 10 A IF = 20 A Is = 20 A di/dt = 200A/us, Typ. Max. Units V -18 -12 5.5 6 7 -10 8 9 -500 11 6.5 1.0 7.5 1 5 10 2 8 1600 450 1100 400 110 V V m m mV nC nC nC nC ns pF 0.25 750 1100 4 0.5 400 900 mA mV mV mV nC 2 LD1106S Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Typical Operating Characteristics (TA = +25C, unless otherwise noted.) RDS(ID=-10A) vs IG, Pulsed at Room Temperature. 2 0.0096 0.0094 0.0092 0.0090 0.0088 0.0086 0.0084 0.0082 0.0080 0.0078 0.0076 0.0074 0.0072 0.0070 0.001 Total Gate Charge curves 1 0 VGS(V) Lot 1 Lot 2 Lot 3 RDS(Ohms) -1 -2 -3 -4 -5 0 Capacitive Charges Region DC Charges Region 0.010 IG(A) 0.100 1.000 5 10 QtotG(nC) 15 20 25 Figure 1 - RDSON vs Gate Current at ID - 10A B V d s p lo t: Id v s V d s fo r V g s=-4 V 1 .40 E -0 3 1 .20 E -0 3 1 .00 E -0 3 Figure 2 - Total Gate Charge Capacitance vs VDS, VGS=-4V at Room Temp 1750 1500 1250 C(pF) Id(A) 8 .00 E -0 4 6 .00 E -0 4 4 .00 E -0 4 2 .00 E -0 4 0 .00 E + 0 0 0 4 8 12 V d s(V ) 16 20 24 1000 750 500 250 0 0 5 10 VDSV) Ciss Coss Crss 15 20 25 Figure 3 - Breakdown Voltage Vds vs Id IG vs VGS, Source and Drain Grounded. LD103SG6, at 25'C 1.E-01 9.E-02 8.E-02 7.E-02 6.E-02 5.E-02 4.E-02 3.E-02 2.E-02 1.E-02 0.E+00 0.0 0.1 0.2 0.3 0.4 VGS(V) 0.5 0.6 0.7 0.8 Figure 4 - Capacitance vs Drain Voltage Vds IG vs VGS, Drain Open Room Temp 5.0E-04 3.0E-04 1.0E-04 -1.0E-04 -3.0E-04 -5.0E-04 -7.0E-04 -9.0E-04 -1.1E-03 -1.3E-03 -14 -12 -10 -8 -6 VGSV) IG(A) IG(A) -4 -2 0 2 Figure 5 - IG vs Gate Voltage VGS Figure 6 - Typical Gate Voltage Characteristic 3 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S Product Specification Typical Operating Characteristics (TA = +25C, unless otherwise noted.) Normalized Rdson vs Temp at ID=-20A 2.00 25.0 20.0 15.0 10.0 Id, Drain Current (A) 1.90 Normalized Rdson 1.80 1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0 20 40 60 80 Temp(C) 100 120 140 IG=1mA IG=5mA IG=10mA IG=20mA IG=40mA IG=100mA 5.0 0.0 0 0.5 0.1 0.15 0.2 Vds, Drain-to-Source Voltage (V) Figure 7 - RDSON Temperature Coefficient ID vs VDS, Schottky Diode of LD103SG6 at 25oRoom Temp 0 -5 -10 -15 -20 -25 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 VDS(V) Figure 8 - On-Region Characteristics 100 5s Ig = 40mA Single Pulse Tc = 25C 100s 1ms 10ms Rdson Limit Thermal Limit Package Limit DC Id, Drain Current (A) 10 ID(A) 1 0.0 0.1 1 10 100 Vds, Drain-to-Source Voltage (V) Figure 9 - Schottky Diode Voltage vs Current Total Power Dissipation (W) 60 50 ZthJA (K/W) Figure 10 - Safe Operating Area ZthJA = f(tp) (parameter D= tp/T) 1.E+00 D = 0.5 0.2 0.1 Ptot (W) 40 30 20 10 0 0 25 50 75 100 125 150 175 Temperature (C) 1.E-01 0.05 0.02 P(pk) tp T Note: 1. Duty Factor D = tp/T 2. Peak Tj = P(pk)*ZthJA + TA 0.01 Single Pulse 1.E-02 1.E-05 1.E-04 1.E-03 1.E-02 tp (s) 1.E-01 1.E+00 1.E+01 Figure 11 - Total Power Dissipation 4 LD1106S Figure 12 - Normalized Thermal Response Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Ordering Information Product Number LD1106S PN Marking LD1106S Package TO252 (DPAK) Package and Marking Information DIMENSIONS DIM. A A1 A2 B B2 C C2 D D1 E E1 e G H L2 L4 R V2 mm. TYP. MIN. MAX. 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 5.40 6.20 5.10 6.40 6.60 4.70 2.28 4.40 4.60 9.35 10.10 0.80 0.60 1.00 0.20 0 8 inch TYP. MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.212 0.201 0.252 0.185 0.090 0.173 0.368 0.031 0.023 0.008 0 MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 LD1106S xx.xx.xx 0.181 0.397 0.039 8 Life Support Policy LOVOLTECH's PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary No Identification Needed Product Status In definition or in Design Initial Production In Production Definition This datasheet contains the design specifications for product development. Specifications may change without notice. This datasheet contains preliminary data; additional and application data will be published at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design. Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S 5 Product Specification |
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